The ultra-short pulsed laser annealing process enhances the performance of MoS2 thin film\ntransistors (TFTs) without thermal damage on plastic substrates. However, there has been insufficient\ninvestigation into how much improvement can be brought about by the laser process. In this paper,\nwe observed how the parameters of TFTs, i.e., mobility, subthreshold swing, Ion/Ioff ratio, and Vth,\nchanged as the the TFTsâ?? contacts were (1) not annealed, (2) annealed on one side, or (3) annealed on both\nsides. The results showed that the linear effective mobility increased from 13.14 [cm2/Vs]\n(not annealed) to 18.84 (one side annealed) to 24.91 (both sides annealed). Also, Ion/Ioff ratio increased\nfrom 2.27 * 105 (not annealed) to 3.14 * 105 (one side annealed) to 4.81 * 105 (both sides annealed),\nwith Vth shifting to negative direction. Analyzing the main reason for the improvement through the\nY function method (YFM), we found that both the contact resistance (Rc) and the channel interface\nresistance (Rch) improves after the pulsed laser annealings under different conditions. Moreover,\nthe Rc enhances more dramatically than the Rch does. In conclusion, our picosecond laser annealing\nimproves the performance of TFTs (especially, the Rc) in direct proportion to the number of annealings\napplied. The results will contribute to the investigation about correlations between the laser annealing\nprocess and the performance of devices.
Loading....